09:00 | Introduction by session Co-chair | 5 min |
09:05 | LED device technology - new production trends such as UV emitter and non polar high power devices
Prof. Dr. Michael Heuken
AIXTRON AG | 30 min |
09:35 | MOCVD reactor technology for LED mass production
Dr. Bastian Marheineke
AIXTRON AG | 30 min |
10:05 | Recent progress in optical In situ measurements for production monitoring
Dr. Kolja Haberland
LayTec-Gesellschaft für in-situ und Nano-Sensorik GmbH | 30 min |
10:35-10:50 | Coffee Break | |
10:50 | MO chemicals: safety and purity issues
Dr. Ping Gong
Akzo Nobel High Purity Metal Organics | 30 min |
11:20 | Ways towards structural characterization of GaN based LED structures
Dr. Joachim Woitok
PANalytical | 30 min |
11:50 | Photoluminescence mapping as a tool to improve LED production
Dr. Shouyin Wang
Nanometrics | 30 min |
12:20-12:30 | Summary and Conclusion | 10 min |
12:30-14:00 | End of first half day and Lunch | |
14:00 | How to use and optimize an LED production MOCVD system
Dr. Don Chang
AIXTRON Taiwan Co., Ltd. | 30 min |
14:30 | GaN LED on Silicon substrate-latest results from a joint university industry consortium
Prof. Dr. Colin J. Humphreys
University of Cambridge | 30 min |
15:00-15:30 | Coffee Break | |
15:30 | High power optoelectronic devices grown by MOCVD
Dr. Markus Weyers
Ferdinand Braun Institute | 30 min |
16:00 | MOCVD hardware and maintenance
Dr. Yi-Jun Sun
AIXTRON AG Shanghai Branch, Global Service Operations | 30 min |
16:30-17:00 | Closing Remarks | 30 min |
