International Short Course on MOCVD Technology
in conjunction with
5th China International Exhibition & Forum on Solid State Lighting Shenzhen, P. R. China
Date & time: July 24, 2008 09:00–17:00
Place: Shenzhen Convention & Exhibition Center
Host: China Solid State Lighting Alliance (CSA)
Organizer: AIXTRON AG
Learn more and get to know “Epitaxy“ for Solid State Lighting applications Topics: ■ How to optimize MOCVD production technology ■ How to understand X-Ray and PL Data during LED optimization ■ Safety, purity and cost issues of starting material ■ Future LED and lighting trends
Agenda
09:00-09:05 | Introduction by Session Co-Chair | 5 min | 09:05-09:35 | 发光二极管器件技术 － 新产品发展趋势例如紫外发射器和非极性高功率器件
Prof. Dr. Michael Heuken
AIXTRON AG | 30 min | 09:35-10:05 | 用于发光二极管量产的MOCVD反应腔技术
Dr. Bastian Marheineke
AIXTRON AG | 30 min | 10:05-10:35 | 用于产品监测的光学在位测量技术发展近况
Dr. Kolja Haberland
LayTec-Gesellschaft für in-situ und Nano-Sensorik mbH | 30 min | 10:35-10:50 | Coffee Break | | 10:50-11:20 | 金属有机化学材料：安全性和纯度
Dr. Ping Gong
Akzo Nobel High Purity Metal Organics | 30 min | 11:20-11:50 | GaN基发光二极管结构表征方法
Dr. Joachim Woitok
PANalytical | 30 min | 11:50-12:20 | 光致发光扫描表征方法用来提高发光二极管生产
Dr. Shouyin Wang
Nanometrics | 30 min | 12:20-12:30 | Summary and Conclusion | 10 min | 12:30-14:00 | End of first half day and Lunch | | 14:00-14:30 | 如何使用以及优化发光二极管量产MOCVD系统
Dr. Don Chang
AIXTRON Taiwan Co., Ltd. | 30 min | 14:30-15:00 | Si衬底上生长GaN发光二极管——来自于产学联盟的最新结果
Prof. Dr. Colin J. Humphreys
University of Cambridge | 30 min | 15:00-15:30 | Coffee Break | | 15:30-16:00 | 基于MOCVD生产的高功率光电子器件
Dr. Markus Weyers
Ferdinand Braun Institute | 30 min | 16:00-16:30 | MOCVD硬件及维护
Dr. Yi-Jun Sun
AIXTRON AG Shanghai Branch, Global Service Operations | 30 min | 16:30-17:00 | Closing Remarks | 30 min |
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